Characteristics of High-Order Silane Based Si and Sige Epitaxial Growth Under 600°C

Author:

Yoon Dongmin,Shin Hyerin,Oh Seokmin,Jo Chunghee,Lee Kiseok,Jung Seonwoong,Ko Dae-Hong

Publisher

Elsevier BV

Reference42 articles.

1. Contact Cavity Shaping and Selective SiGe: B Low-Temperature Epitaxy Process Solution for sub 10-9 ?. cm2 Contact Resistivity in Nonplanar FETs;N Breil;IEEE Symposium on VLSI Technology and Circuits,2023

2. First Monolithic Integration of 3D Complementary FET (CFET) on 300mm Wafers;S Subramanian;Ieee Symposium on Vlsi Technology,2020

3. Monolithic 3D Integration: a powerful alternative to classical 2D Scaling;M Vinet;Ieee Soi-3d-Subthreshold Microelectronics Technology Unified Conference (S3s),2014

4. Demonstration of Ultimate CMOS based on 3D Stacked InGaAs-OI/SGOI Wire Channel MOSFETs with Independent Back Gate;T Irisawa;Symposium on Vlsi Technology,2014

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