High quality silicon‐on‐insulator structure formed by oxygen implantation and lamp annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99294
Reference12 articles.
1. Microstructure of silicon implanted with high dose oxygen ions
2. Microstructure of high‐temperature annealed buried oxide silicon‐on‐insulator
3. New conditions for synthesizing SOI structures by high dose oxygen implantation
4. High temperature oxygen implantation in silicon: Soil structure formation characteristics
5. Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantation
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The effect of Fe, Cr and Mo on the resistivity of the top silicon layer of buried oxide silicon-on-insulator structures;Semiconductor Science and Technology;1992-08-01
2. Redistributed of Fe, Cr and Mo in buried oxide silicon-on-insulator structures during high-temperature furnace annealing;Semiconductor Science and Technology;1992-08-01
3. Characterization of buried nitride silicon-on-insulator substrate;Semiconductor Science and Technology;1992-03-01
4. Evaluation of Vacancy-Type Defects in Simox Substrates by a Slow Positron Beam and a Pulsed Positron Beam;MRS Proceedings;1992
5. Effects of Oxygen Concentration and Annealing Sequence on Microstructure of Separation by Implanted Oxygen Wafer with High-Temperature Annealing;Japanese Journal of Applied Physics;1991-01-15
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