Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95009
Reference6 articles.
1. The Top Silicon Layer of SOI Formed by Oxygen Ion Implantation
2. An AES Investigation into the Phase Distribution of Ion‐Implanted Oxygen in Silicon N‐Channel Devices
3. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
4. SIMS analysis of silicon on insulator structures formed by high-dose O+ implantation into silicon
5. Formation of buried insulating layers in silicon by the implantation of high doses of oxygen
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1. Development and test of 2.45 GHz microwave ion source based intense ion beam experimental facility;Vacuum;2016-02
2. Chapter 2 A review of buried oxide structures and SOI technologies;New Insulators, Devices and Radiation Effects;1999
3. Redistribution Process of Oxygen Atoms in Separation-by-Implanted-Oxygen (SIMOX) Substrates;Japanese Journal of Applied Physics;1998-02-15
4. Photoluminescence study of the optical properties of SiGe quantum wells on separation by implanted oxygen substrates;Journal of Applied Physics;1997-04-15
5. Self-structuring of buried SiO2 precipitate layers during IBS: A computer simulation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-05
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