SIMS analysis of silicon on insulator structures formed by high-dose O+ implantation into silicon

Author:

Kilner J.A.,Littlewood S.D.,Hemment P.L.F.,Maydell-Ondrusz E.,Stephens K.G.

Publisher

Elsevier BV

Subject

General Engineering

Reference17 articles.

1. Technical Digest;Malhi;IEDM,1981

2. Proc. LEIB3;Hemment,1983

3. Primary‐ion charge compensation in SIMS analysis of insulators

4. Secondary ion mass spectrometry SIMS II;Wach,1979

5. Proc. Int. Conf. Ion beam modification of materials;Hemment,1982

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1. Laser irradiation effects in Si+-implanted SiO2;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-03

2. E'1 centres in buried oxide layers formed by oxygen ion implantation into silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-03

3. The location and annealing of paramagnetic oxygen vacancies (E1' centres) in silicon implanted with high doses of oxygen;Journal of Physics: Condensed Matter;1991-04-01

4. Depth profile analysis of two element mixtures by rutherford backscattering spectrometry;Radiation Effects and Defects in Solids;1990-05

5. Nitrogen-15 isotope tracer studies of buried nitride layer formation by high dose implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-03

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