Nitrogen-15 isotope tracer studies of buried nitride layer formation by high dose implantation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference7 articles.
1. SIMS analysis of buried silicon nitride layers formed by high dose implantation of 14N and 15N
2. Microstructural characterization of nitrogen‐implanted silicon‐on‐insulator
3. Microstructure of silicon-on-insulator structures produced by high dose nitrogen implantation of silicon
4. SIMS analysis of silicon on insulator structures formed by high-dose O+ implantation into silicon
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Rutherford backscattering and channelling studies of buried nitride structures directly produced by high intensity ion implantation of nitrogen into silicon;Vacuum;1994-01
2. RBS, RHEED and THEED studies of SIMOX and SIMNI structures formed by ion beam synthesis;Vacuum;1993-11
3. Synthesis of buried insulating layers in silicon by ion implantation;Materials Chemistry and Physics;1992-06
4. Buried insulator layer formation by N+ implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-03
5. Modelling of the formation of buried dielectric layers by ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-03
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