Redistributed of Fe, Cr and Mo in buried oxide silicon-on-insulator structures during high-temperature furnace annealing
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/7/i=8/a=006/pdf
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1. SOI Technologies: Device Applications and Future Prospects
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3. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
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5. The Microstructure of Silicon-on-Insulator Structures Formed by High Dose Oxygen Ion Implantation
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1. Overview of Wafer Contamination and Defectivity;Handbook of Silicon Wafer Cleaning Technology;2018
2. Overview of Wafer Contamination and Defectivity;Handbook of Silicon Wafer Cleaning Technology;2008
3. Rapid Thermal Processing: Fixing Problems with the Concept of Thermal Budget;Journal of The Electrochemical Society;1997-05-01
4. Silicon-on-insulator material qualification for low-power complementary metal-oxide semiconductor application;Thin Solid Films;1995-12
5. The effect of Fe, Cr and Mo on the resistivity of the top silicon layer of buried oxide silicon-on-insulator structures;Semiconductor Science and Technology;1992-08-01
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