1. 19. Akiyama S. , Ogawa S. , Yoneda M. , Yoshii N. and Terui Y. , in Digest of Technical Papers, p. 352, IEDM, Washington, DC, 1983.
2. High-voltage buried-channel MOS fabricated by oxygen implantation into silicon
3. 10. Drowley C. I. and Kamins T. I. , MRS Spring Meeting, Albuquerque, New Mexico, February 1984.
4. Dielectric Isolation: Comprehensive, Current and Future
5. 7. Chen C. K. , Geis M. W. , Choi H. K. , Tsaur B-Y. , and Fan J. C. C. , Paper A7.6 presented in this symposium.