Silicon-on-insulator material qualification for low-power complementary metal-oxide semiconductor application-Reference-Cited by-同舟云学术

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Silicon-on-insulator material qualification for low-power complementary metal-oxide semiconductor application

Published:1995-12 Issue:1-2 Volume:270 Page:578-583
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Mendicino M.A.,Vasudev P.K.,Maillot P.,Hoener C.,Baylis J.,Bennett J.,Boden T.,Jackett S.,Huffman K.,Godwin M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Low-power CMOS digital design

2. Int. Conf. on Solid State Devices and Materials;Shahidi,1994

3. Low-power 1/2 frequency dividers using 0.1- mu m CMOS circuits built with ultrathin SIMOX substrates

4. Int. SOI Conf.;Sadana,1994

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