Microstructure of high‐temperature annealed buried oxide silicon‐on‐insulator
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96672
Reference9 articles.
1. Simox technology and its application to CMOS LSIS
2. A Review of Silicon-On-Insulator Formation by Oxygen Ion Implantation
3. Microstructure of silicon implanted with high dose oxygen ions
4. Silicon on Insulator by High Dose Implantation
5. The Top Silicon Layer of SOI Formed by Oxygen Ion Implantation
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1. Second harmonic generation analysis in hydrogenated amorphous silicon nitride thin films;Applied Physics Letters;2007-01-08
2. Redistribution Process of Oxygen Atoms in Separation-by-Implanted-Oxygen (SIMOX) Substrates;Japanese Journal of Applied Physics;1998-02-15
3. Photoluminescence study of the optical properties of SiGe quantum wells on separation by implanted oxygen substrates;Journal of Applied Physics;1997-04-15
4. Implantation of si under extreme conditions: The effects of high temperature and dose on damage accumulation;Journal of Electronic Materials;1996-01
5. Hole confinement in a Si/GeSi/Si quantum well on SIMOX;IEEE Transactions on Electron Devices;1996
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