Characterization of buried nitride silicon-on-insulator substrate
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/7/i=3/a=023/pdf
Reference10 articles.
1. Silicon on insulator by ion implantation: A dream or a reality?
2. The Effect of Beam Current on the Crystal Quality of the Residual Silicon Layer in Buried Nitride Structure Formed by Nitrogen Implantation with a Stationary Beam
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1. Transmission electron microscopy study of simultaneous high-dose C++N+ co-implantation into (111)Si;Thin Solid Films;2003-02-24
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