Optical properties of AlGaN∕GaN multiple quantum well structure by using a high-temperature AlN buffer on sapphire substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2161941
Reference22 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
3. GaN Growth Using GaN Buffer Layer
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5. Growth, spectroscopic and thermal behavior of Cd(SCN)2(DMSO)2
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1. Influence of growth interruption on the morphology and luminescence properties of AlGaN/GaN ultraviolet multi-quantum wells;Optics Express;2023-11-07
2. A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN‐based high‐frequency power electronics;Surface and Interface Analysis;2022-01-26
3. Molecular beam epitaxy and characterization of Al0.6Ga0.4N epilayers;Journal of Crystal Growth;2019-02
4. High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer;Optics Express;2018-02-20
5. Threading dislocation reduction in three-dimensionally grown GaN islands on Si (111) substrate with AlN/AlGaN buffer layers;Journal of Applied Physics;2017-09-14
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