Threading dislocation reduction in three-dimensionally grown GaN islands on Si (111) substrate with AlN/AlGaN buffer layers
Author:
Affiliation:
1. Department of Materials Science and Engineering, National Chiao Tung University, University Rd. 1001, Hsinchu 30010, Taiwan
Funder
National Chiao Tung University (NCTU)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5002079
Reference25 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE
3. The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE
4. Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate
5. Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate
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