Raman and ion channeling analysis of damage in ion‐implanted GaAs: Dependence on ion dose and dose rate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351077
Reference10 articles.
1. Silicon implantation into GaAs: Observations of dose rate dependent electrical activation and damage
2. Dose rate effects on damage accumulation in Si+‐implanted gallium arsenide
3. Dose rate effects on damage formation in ion-implanted gallium arsenide
4. The influence of dose rate and analysis procedures on measured damage in P+ ion implanted GaAs
5. Raman spectra from Si and Sn implanted GaAs
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