Crystal structure analysis of epitaxial silicon films formed by a low kinetic energy particle process
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100919
Reference4 articles.
1. Room‐temperature copper metallization for ultralarge‐scale integrated circuits by a low kinetic‐energy particle process
2. Low‐temperature silicon epitaxy by low‐energy bias sputtering
3. Insitusubstrate‐surface cleaning for very low temperature silicon epitaxy by low‐kinetic‐energy particle bombardment
4. Electrical characterization of epitaxial silicon films formed by a low kinetic energy particle process
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3. Formation of giant-grain copper interconnects by a low-energy ion bombardment process for high-speed ULSIs;Materials Chemistry and Physics;1995-08
4. Process Optimization for the Fabrication of the Thin PtSi Schottky Barrier Diode IRCCD;MRS Proceedings;1994
5. Characterization of Sputtered Ge Film;MRS Proceedings;1994
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