Process Optimization for the Fabrication of the Thin PtSi Schottky Barrier Diode IRCCD

Abstract

AbstractHigh quality abrupt junction PtSi thin film prepared by the MBE system with in situ precleaning and annealing was obtained. Wet etching and low energy hydrogen plasma excitation to generate H-terminated Si surface and low temperature thermal desorption were used to clean the substrate. IRCCD thus fabricated achieved the quantum efficiency 0.8%. TEM, STM/AFM, AES/ESCA, and RBS were used to monitor the fabrication processes.