Electrical characterization of epitaxial silicon films formed by a low kinetic energy particle process
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100981
Reference7 articles.
1. High‐rate growth at low temperatures by free‐jet molecular flow: Surface‐reaction film‐formation technology
2. Nonequilibrium boron doping effects in low‐temperature epitaxial silicon films
3. Low Temperature Silicon Epitaxy by Partially Ionized Vapor Deposition
4. Crystalline and Electrical Characteristics of Silicon Films Deposited by Ionized-Cluster-Beams
5. Room‐temperature copper metallization for ultralarge‐scale integrated circuits by a low kinetic‐energy particle process
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Etching of Various SiO2;Scientific Wet Process Technology for Innovative LSI/FPD Manufacturing;2005-12-21
2. Electrical characteristics of p–n junction diodes fabricated by Si epitaxy at low temperature using sputtering-type electron cyclotron resonance plasma;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
3. Epitaxial Si(001) grown at 80–750 °C by ion‐beam sputter deposition: Crystal growth, doping, and electronic properties;Journal of Applied Physics;1996-07-15
4. Ultra-clean processing for ULSI;Microelectronics Journal;1995-09
5. Formation of giant-grain copper interconnects by a low-energy ion bombardment process for high-speed ULSIs;Materials Chemistry and Physics;1995-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3