Crystalline and Electrical Characteristics of Silicon Films Deposited by Ionized-Cluster-Beams-Reference-Cited by-同舟云学术

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Crystalline and Electrical Characteristics of Silicon Films Deposited by Ionized-Cluster-Beams

Published:1980-04 Issue:4 Volume:19 Page:L181-L184
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamada Isao,Saris Frans W.,Takagi Toshinori,Matsubara Kakuei,Takaoka Hiroshi,Ishiyama Satoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/19/i=4/a=L181/pdf

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimum Discharge Condition of DC Bias Electron Cyclotron Resonance Plasma Sputtering for High Quality Si Epitaxial Growth;Japanese Journal of Applied Physics;2000-05-15

2. Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-Type Electron Cyclotron Resonance Plasma;Japanese Journal of Applied Physics;1999-03-01

3. Ionized cluster beam deposition of antimony and bismuth films;Journal of Physics D: Applied Physics;1999-01-01

4. Study of in-situ surface cleaning for Si and SiGe epitaxy on Si with a novel ion beam vapor/assisted deposition technique;Progress in Surface Science;1995-12

5. Ion beam vapor deposition for Si epitaxy at low substrate temperatures;Journal of Applied Physics;1995-08

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