Dependence of grain size on the substrate temperature of Si and Ge films prepared by evaporation under ultrahigh vacuum
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96732
Reference8 articles.
1. Low‐temperature formation of polycrystalline silicon films by molecular beam deposition
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5. Crystallization temperature of ultrahigh vacuum deposited silicon films
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