Effect of substrate bias on the properties of microcrystalline silicon films deposited in a glow discharge
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference20 articles.
1. Polycrystalline silicon films deposited in a glow discharge at temperatures below 250 °C
2. Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees C
3. S. Vepřek, Z. Iqbal, O. Kühne, P. Capezutto, F.A. Sarott & J.K. Gimzewski, J. Phys. C: Solid State Phys. (submitted).
4. Raman scattering from small particle size polycrystalline silicon
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