Low‐temperature formation of polycrystalline silicon films by molecular beam deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330580
Reference6 articles.
1. Molecular beam and solid-phase epitaxies of silicon under ultra-high vacuum
2. Structure of chemically deposited polycrystalline-silicon films
3. Structures of Si Films Chemically Vapor-Deposited on Amorphous SiO2Substrates
4. Structure and Properties of LPCVD Silicon Films
5. Polycrystalline‐silicon thin‐film transistors on glass
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1. Control of the azimuthal orientation of grains in polycrystalline Si films;AIP Advances;2012-06
2. Characterizations of polycrystalline SiGe films on SiO2 grown by gas-source molecular beam deposition;Thin Solid Films;2008-11
3. Influence of growth temperature on order within silicon films grown by ultrahigh-vacuum evaporation on silica;Applied Physics Letters;2006-03-20
4. Influence of Initial Amorphous Layer Deposition Temperature on Lateral solid-Phase Epitaxy of Silicon;Japanese Journal of Applied Physics;2002-02-15
5. A device for sublimation molecular-beam deposition of silicon films;Instruments and Experimental Techniques;2001
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