Fowler–Nordheim current–stress resistance of Si oxynitride grown in helicon-wave excited nitrogen–argon plasma
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365722
Reference11 articles.
1. Electrical and reliability characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal processing in N/sub 2/O
2. High performance dual-gate sub-halfmicron CMOSFETs with 6 nm-thick nitride SiO/sub 2/ films in an N/sub 2/O ambient
3. MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O
4. Furnace nitridation of thermal SiO/sub 2/ in pure N/sub 2/O ambient for ULSI MOS applications
5. Magnetically Excited Plasma Oxynitridation of Si at Room Temperature
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of Postannealing on Electrical Characteristics and Fowler-Nordheim Current Stress Resistance of Si Oxynitride Grown in Helicon-Wave-Excited O2–N2–Ar Plasma;Japanese Journal of Applied Physics;2000-03-15
2. Effects of Gas-Flow-Rate Ratio on Electrical Characteristics and Fowler-Nordheim Stress Resistance of Si Oxynitride Grown with Helicon-Wave-Excited N2–Ar plasma;Japanese Journal of Applied Physics;2000-03-15
3. Low-Temperature Growth of Si Oxide with Good Electrical Qualities Using Helicon-Wave-Excited O2–Ar Plasma and Forming Gas Annealing;Japanese Journal of Applied Physics;2000-01-15
4. Fowler–Nordheim current injection and write/erase characteristics of metal–oxide–nitride–oxide–Si structure grown with helicon-wave excited plasma processing;Journal of Applied Physics;1999-01
5. Pulsed Fowler–Nordheim current stress resistance of Si oxynitride grown with helicon-wave excited nitrogen–argon plasma;Journal of Applied Physics;1998-06-15
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