Pulsed Fowler–Nordheim current stress resistance of Si oxynitride grown with helicon-wave excited nitrogen–argon plasma
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367890
Reference12 articles.
1. Electrical and reliability characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal processing in N/sub 2/O
2. High performance dual-gate sub-halfmicron CMOSFETs with 6 nm-thick nitride SiO/sub 2/ films in an N/sub 2/O ambient
3. MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O
4. Furnace nitridation of thermal SiO/sub 2/ in pure N/sub 2/O ambient for ULSI MOS applications
5. Oxynitridation of Silicon Using Helicon-Wave Excited and Inductively-Coupled Nitrogen Plasma
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1. Effect of nitrogen plasma conditions on electrical properties of silicon oxynitrided thin films for flash memory applications;Thin Solid Films;2001-05
2. Oxynitridation of silicon with nitrogen plasma for flash memory applications characterized by high frequency capacitance–voltage measurements;Thin Solid Films;2001-04
3. Rate-limiting steps during nitrogen incorporation in furnace-grown silicon oxynitrides: effects on wafer-to-wafer uniformity;Thin Solid Films;2000-05
4. GaN-Passivation of GaAs with Less Plasma Damages: Effects of Input Plasma Power, Substrate Heating and Post-Thermal Annealing;Japanese Journal of Applied Physics;2000-04-15
5. Effects of Postannealing on Electrical Characteristics and Fowler-Nordheim Current Stress Resistance of Si Oxynitride Grown in Helicon-Wave-Excited O2–N2–Ar Plasma;Japanese Journal of Applied Physics;2000-03-15
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