A physics-based model of flat-band capacitance for metal oxide thin-film transistors
Author:
Affiliation:
1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
2. New Vision Opto-Electronic Technology Co., Ltd., Guangzhou 510530, China
Funder
973 Program
International Cooperation Program of Guangzhou Economic and Technological Development Zone
Pear River S&T Nova Program of Guangdong
Science and Technology Program of Guangdong Province
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5023032
Reference18 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. High-mobility thin film transistors with neodymium-substituted indium oxide active layer
3. Chitosan-gated low-voltage transparent indium-free aluminum-doped zinc oxide thin-film transistors
4. MOSFET Models for VLSI Circuit Simulation
5. MOS flat-band capacitance method at low temperatures
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2. All solution-processed hafnium rich hybrid dielectrics for hysteresis free metal-oxide thin-film transistors;Journal of Materials Chemistry C;2023
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