All solution-processed hafnium rich hybrid dielectrics for hysteresis free metal-oxide thin-film transistors-Reference-Cited by-同舟云学术

All solution-processed hafnium rich hybrid dielectrics for hysteresis free metal-oxide thin-film transistors

Published:2023 Issue:5 Volume:11 Page:1824-1841
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Arroyo J. Meza¹^ORCID,Rao M. G. Syamala¹^ORCID,Ventura M. S. de Urquijo¹,Martínez-Landeros V. H.²,Daunis Trey B.³,Rodríguez Ovidio⁴^ORCID,Hsu Julia W. P.³,Bon R. Ramírez¹

Affiliation:

1. Centro de Investigación y de Estudios Avanzados del IPN, Unidad Querétaro, Apdo, Postal 1-798, 76001, Querétaro, Querétaro, Mexico

2. Facultad de Metalurgia, Universidad Autónoma de Coahuila, Carr. 57, km. 5, C.P.25720, Monclova, Coahuila, Mexico

3. Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA

4. Department of Electrical and Computer Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas, 75080, USA

Abstract

We fabricated all solution based In2O3 TFTs with AlOx–PVP and HfAlOx–PVP hybrid dielectric layers and observed the reduction of hysteresis by incorporation of HfOx into the pristine AlOx–PVP hybrid dielectric with enhanced electrical performance.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D2TC03761K

Reference72 articles.

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