A Multiple-Trapping-and-Release Transport Based Threshold Voltage Model for Oxide Thin Film Transistors-Reference-Cited by-同舟云学术

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A Multiple-Trapping-and-Release Transport Based Threshold Voltage Model for Oxide Thin Film Transistors

Published:2021-04-23 Issue:7 Volume:50 Page:4050-4057
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Desai Mohil S.,Kandpal Kavindra,Goswami Rupam

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s11664-021-08907-7.pdf

Reference25 articles.

1. J. Lee, S. Chang, S. Koo, and S. Lee, IEEE Electron Device Lett. 31, 225 (2010).

2. J. Kwon, K. Son, J. Jung, T. Kim, M. Ryu, K. Park, B. Yoo, J. Kim, Y. Lee, K. Park, S. Lee, and J. Kim, IEEE Electron Device Lett. 29, 1309 (2008).

3. L. Zhang L, W. Xiao, W. Wu, B. Liu (2019) Appl. Sci. (Switzerland) 9:1

4. A. Ma, M. Benlamri, A. Afshar, G. Shoute, K. Cadein and D. Barlage, CS Mantech 385 (2014).

5. N. Lu, W. Jiang, Q. Wu, D. Geng, L. Li, and M. Liu, Micromachines 9, 1 (2018).

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