Influence of the donor depth on the determination of the band discontinuity of isotype heterojunctions by the capacitance‐voltage technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96856
Reference10 articles.
1. A critical review of heterojunction band offsets
2. Measurement of isotype heterojunction barriers byC‐Vprofiling
3. Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As,N‐nheterojunction byC‐Vprofiling
4. Relationship between the conduction‐band discontinuities and band‐gap differences of InGaAsP/InP heterojunctions
5. Determination of the conduction‐band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance‐voltage measurements
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1. Capacitance-voltage profiling on polar III-nitride heterostructures;Journal of Applied Physics;2012-10-15
2. Probing semiconductor band structures and heterojunction interface properties with ballistic carrier emission:GaAs/AlxGa1−xAsas a model system;Physical Review B;2010-06-24
3. Experimental and theoretical aspects of electrical characteristics of Au/ZnSe/GaAs heterostructures;Advanced Materials for Optics and Electronics;1994-01
4. Correlation between optical spectroscopy and capacitance‐voltage profile simulation applied to interface states in multilayer GaAs/AlGaAs heterostructures;Journal of Applied Physics;1993-05-15
5. Anomolous Behavior of DX Centers in Compositionally Graded GaAs/AlXGa1-XAs:Si Heterojunctions;MRS Proceedings;1993-01
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