Anomolous Behavior of DX Centers in Compositionally Graded GaAs/AlXGa1-XAs:Si Heterojunctions
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering
Reference10 articles.
1. Band discontinuity for GaAs/AlGaAs heterojunction determined byC‐Vprofiling technique
2. Measurement of the conduction band discontinuities of InGaAsP/InP heterojunctions using capacitance–voltage analysis
3. Influence of the donor depth on the determination of the band discontinuity of isotype heterojunctions by the capacitance‐voltage technique
4. Measurement of isotype heterojunction barriers byC‐Vprofiling
5. Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As,N‐nheterojunction byC‐Vprofiling
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