Band discontinuity for GaAs/AlGaAs heterojunction determined byC‐Vprofiling technique
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334852
Reference15 articles.
1. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
2. Direct Observation of Superlattice Formation in a Semiconductor Heterostructure
3. Parabolic quantum wells with theGaAs−AlxGa1−xAssystem
4. Energy-gap discontinuities and effective masses forGaAs−AlxGa1−xAsquantum wells
5. Measurement of isotype heterojunction barriers byC‐Vprofiling
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