Energy-gap discontinuities and effective masses forGaAs−AlxGa1−xAsquantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.29.7085/fulltext
Reference17 articles.
1. Molecular beam epitaxial growth and electrical transport of graded barriers for nonlinear current conduction
2. Self-consistent calculation of properties of GaAs-AlAs superlattices with homopolar interfaces
3. Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As,N‐nheterojunction byC‐Vprofiling
4. Parabolic quantum wells with theGaAs−AlxGa1−xAssystem
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