Self-consistent calculation of properties of GaAs-AlAs superlattices with homopolar interfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.26.5824/fulltext
Reference35 articles.
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4. Resonant Raman Scattering in a Semiconductor Superlattice
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1. Theoretical Models on the Formation of Semiconductor Interface Barriers;Semiconductor Superlattices and Interfaces;1993
2. Zone-folding effect in short-period (GaAs)n/(AlAs)nsuperlattices withnin the range 3–15;Physical Review B;1991-05-15
3. Connection of envelope functions at semiconductor heterointerfaces. II. Mixings ofΓandXvalleys in GaAs/AlxGa1−xAs;Physical Review B;1989-12-15
4. Connection of envelope functions at semiconductor heterointerfaces. I. Interface matrix calculated in simplest models;Physical Review B;1989-12-15
5. Valley-mixing effects in short-period superlattices;Physical Review B;1989-09-15
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