Experimental and theoretical aspects of electrical characteristics of Au/ZnSe/GaAs heterostructures
Author:
Publisher
Wiley
Subject
General Chemical Engineering,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs
2. Effect of lattice mismatch in ZnSe epilayers grown on GaAs by molecular beam epitaxy
3. Growth of undoped ZnSe on (100) GaAs by molecular‐beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratio
4. In situ characterization of organometallic growth of ZnSe using grazing incidence X-ray scattering
5. The MOCVD growth without prereaction of ZnSe and ZnS layers
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