Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model
Author:
Affiliation:
1. Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
Funder
Leibniz-Gemeinschaft (Leibniz Association)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4971957
Reference34 articles.
1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
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3. High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
4. Development of gallium oxide power devices
5. MBE grown Ga2O3 and its power device applications
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