High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes-Reference-Cited by-同舟云学术

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High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

Published:2014-05-19 Issue:20 Volume:104 Page:203111
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hwang Wan Sik,Verma Amit,Peelaers Hartwin,Protasenko Vladimir,Rouvimov Sergei,(Grace) Xing Huili,Seabaugh Alan,Haensch Wilfried,de Walle Chris Van,Galazka Zbigniew,Albrecht Martin,Fornari Roberto,Jena Debdeep

Funder

NSF

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4879800

Reference26 articles.

1. Czochralski growth and characterization of β-Ga2O3 single crystals

2. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

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