Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4829996
Reference25 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Present status of amorphous In–Ga–Zn–O thin-film transistors
3. Large Photoresponse in Amorphous In–Ga–Zn–O and Origin of Reversible and Slow Decay
4. Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state
5. Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy
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