Evaluation of oxygen-vacancy concentration through simulated hydrogen diffusion in amorphous In-Ga-Zn-O
Author:
Publisher
Elsevier BV
Subject
Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science
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2. Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway;ACS Nano;2024-03-22
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4. Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for VT Prediction Using Lateral Carrier Density Profiling Technique;IEEE Electron Device Letters;2023-04
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