Ferroelectric Controlled Interfacial Effect on the Electronic Properties of PZT Gated IGZO Channel Thin-Film Transistors-Reference-Cited by-同舟云学术

Ferroelectric Controlled Interfacial Effect on the Electronic Properties of PZT Gated IGZO Channel Thin-Film Transistors

Published:2024-01-13 Issue:2 Volume:6 Page:1063-1070
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Teng Wen¹,Bao Si-Yao¹,Hu Yu-Qing¹,Deng Xing¹²,Guan Zhao¹²,Chen Bin-Bin¹²^ORCID,Zhong Ni¹²³^ORCID,Xiang Ping-Hua¹²³^ORCID

Affiliation:

1. Key Laboratory of Polar Materials and Devices (Ministry of Education), Department of Electronics, East China Normal University, Shanghai 200241, China

2. Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China

3. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China

Funder

East China Normal University

National Key Research and Development Program of China

Fundamental Research Funds for the Central Universities

Postdoctoral Innovation Project of Shandong Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01493

Reference59 articles.

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4. Flexible Ferroelectric Devices: Status and Applications

5. Synthesis, Microstructure and Properties of Magnetron Sputtered Lead Zirconate Titanate (PZT) Thin Film Coatings

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