Large Photoresponse in Amorphous In–Ga–Zn–O and Origin of Reversible and Slow Decay-Reference-Cited by-同舟云学术

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Large Photoresponse in Amorphous In–Ga–Zn–O and Origin of Reversible and Slow Decay

Published:2010 Issue:9 Volume:13 Page:H324
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Lee Dong Hee,Kawamura Ken-ichi,Nomura Kenji,Kamiya Toshio,Hosono Hideo

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference23 articles.

1. "Front Drive" Display Structure for Color Electronic Paper Using Fully Transparent Amorphous Oxide TFT Array

2. 3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array

3. 42.2: World's Largest (15-inch) XGA AMLCD Panel Using IGZO Oxide TFT

4. Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4Thin-Film Transistors

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3. Physical Insight Into Multiple Gate-Voltage Dependencies of Off-State Photocurrent in Amorphous InZnO Thin-Film Transistors;IEEE Transactions on Electron Devices;2024-03

4. Reliable measurement of the density of states including occupied in-gap states of an amorphous In–Ga–Zn–O thin film via photoemission spectroscopies: Direct observation of light-induced in-gap states;Journal of Applied Physics;2024-02-23

5. Persistent Photoconductivity of Metal Oxide Semiconductors;ACS Applied Electronic Materials;2024-02-23

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