Author:
Baek Yeong Jo,Kang In Hye,Hwang Sang Ho,Han Ye Lin,Kang Min Su,Kang Seok Jun,Kim Seo Gwon,Woo Jae Geun,Yu Eun Seong,Bae Byung Seong
Abstract
AbstractA vertical oxide thin-film transistor was developed with interfacial oxidation for low voltage operation. The gate metal was used as a spacer for the definition of the transistor’s channel as well as the gate electrode. After definition of the vertical side wall, an IGZO (In-Ga-Zn Oxide) layer was deposited, followed by the interfacial oxidation to form a thin gate insulator. Ta was used for the gate material due to the low Gibbs free energy and high dielectric constant of tantalum oxide. A 15 nm tantalum oxide layer was obtained by the interfacial oxidation of Ta at 400 °C under oxygen atmosphere. The thin gate oxide made it possible to operate the transistor under 1 V. The low operation voltage enables low power consumption, which is essential for mobile application.
Publisher
Springer Science and Business Media LLC
Reference27 articles.
1. Yu, B. S. et al. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature. Sci. Rep. 9, 84161–841613 (2019).
2. Park, J. S., Maeng, W.-J., Kim, H.-S. & Park, J.-S. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices. Thin Solid Films 520, 1679–1693 (2012).
3. Myny, K. The development of flexible integrated circuits based on thin-film transistors. Nat. Electron. 1, 30–39 (2018).
4. Heo, J. et al. Implementation of low-power electronic devices using solution-processed tantalum pentoxide dielectric. Adv. Funct. Mater. 28, 1704215(1)-1704215(8) (2018).
5. Chen, Y.-H., Ma, W.C.-Y. & Chao, T. S. High-performance poly-Si TFT with ultra-thin channel film and gate oxide for low-power application. Semicond. Sci. Technol. 30, 105017(1)-105017(6) (2015).
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