Implementation of Low-Power Electronic Devices Using Solution-Processed Tantalum Pentoxide Dielectric-Reference-Cited by-同舟云学术

Implementation of Low-Power Electronic Devices Using Solution-Processed Tantalum Pentoxide Dielectric

Published:2018-05-07 Issue:28 Volume:28 Page:1704215
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Heo Jungwoo¹,Park Song Yi²,Kim Jae Won²,Song Seyeong²,Yoon Yung Jin²,Jeong Jaeki²,Jang Hyungsu²,Lee Kang Taek²,Seo Jung Hwa³,Walker Bright⁴,Kim Jin Young¹²^ORCID

Affiliation:

1. Department of Physics; Ulsan National Institute of Science and Technology (UNIST); Ulsan 44919 South Korea

2. Department of Energy Engineering; Ulsan National Institute of Science and Technology (UNIST); Ulsan 44919 South Korea

3. Department of Materials Physics; Dong-A University; Busan 49315 South Korea

4. Department of Chemistry; Kyung Hee University; 126 Kyungheedae-ro Dongdaemun-gu Seoul 02447 South Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Korea Display Research Corporation

Ulsan National Institute of Science and Technology

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201704215/fullpdf

Reference50 articles.

1. A New Semiconductor Tetrode-The Surface-Potential Controlled Transistor

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3. Two-dimensional charge transport in self-organized, high-mobility conjugated polymers

4. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

5. Solution-processed CdS transistors with high electron mobility

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