Solution-processed CdS transistors with high electron mobility-Reference-Cited by-同舟云学术

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Solution-processed CdS transistors with high electron mobility

Published:2014 Issue:7 Volume:4 Page:3153-3157
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Walker Bright,Kim Gi-Hwan,Heo Jungwoo,Chae Gil Jo,Park Jongnam,Seo Jung Hwa,Kim Jin Young

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C3RA44436H

Reference34 articles.

1. Inorganic Semiconductors for Flexible Electronics

2. Materials and Applications for Large Area Electronics: Solution-Based Approaches

3. Inkjet Printing for Materials and Devices

4. Graphene transistors

5. All-Inorganic Field Effect Transistors Fabricated by Printing

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1. First‐Principles Calculations to Investigate the Ground State, Mechanical Stability, Electronic Structure, and Optical Properties of Tl₂SnX₃ (X = S, Se, Te);Crystal Research and Technology;2024-02-26

2. Simulation and numerical modeling of high performance CH3NH3SnI3 solar cell with cadmium sulfide as electron transport layer by SCAPS-1D;Results in Optics;2024-02

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4. Effect of Multilayers CdS Nanocrystalline Thin Films on the Performance of Dye-Sensitized Solar Cells;Journal of Nanotechnology;2023-05-23

5. Design and fabrication of graphene/CdS Schottky junction for photovoltaic solar cell applications;Optik;2022-09

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