Investigation of stress induced interface states in Al2O3/InGaAs metal-oxide-semiconductor capacitors-Reference-Cited by-同舟云学术

Investigation of stress induced interface states in Al2O3/InGaAs metal-oxide-semiconductor capacitors

Author:

Palumbo F.¹²³,Winter R.⁴,Tang K.⁵,McIntyre P. C.⁵,Eizenberg M.⁴

Affiliation:

1. National Scientific and Technical Research Council (CONICET), Godoy Cruz 2290, Buenos Aires, Argentina

2. Department of Electronic Engineering, National Technological University, Medrano 951, Buenos Aires, Argentina

3. GAIANN, Comisión Nacional de Energía Atómica, Gral.Paz 1499 (1650), Buenos Aires, Argentina

4. Department of Materials Science and Engineering, Technion-Israel Institute of Technology, 32000 Haifa, Israel

5. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA

Funder

Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET)

Ministerio de Ciencia, Tecnología e Innovación Productiva (MINCyT)

Universidad Tecnológica Nacional (UTN)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference36 articles.

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