Comparison of the degradation characteristics of AlON/InGaAs and Al2O3/InGaAs stacks
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4914492
Reference32 articles.
1. Positive bias temperature instability degradation of InGaAs n-MOSFETs with Al2O3 gate dielectric
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1. Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs;Micromachines;2023-08-15
2. Effect of forming gas annealing on the degradation properties of Ge-based MOS stacks;Journal of Applied Physics;2018-04-07
3. Bias temperature stress induced hydrogen depassivation from Al2O3/InGaAs interface defects;Journal of Applied Physics;2018-01-14
4. Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks;IEEE Transactions on Electron Devices;2017-10
5. Temperature dependence of trapping effects in metal gates/Al 2 O 3 /InGaAs stacks;Solid-State Electronics;2017-06
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