Stress induced degradation and reliability of Al 2 O 3 thin film on silicon
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference26 articles.
1. On the scaling issues and high-k replacement of ultrathin gate dielectrics for nanoscale MOS transistors;Wong;Microelectron. Eng.,2006
2. Dielectrics for future transistors;Bersuker;Mater. Today,2004
3. High- k gate dielectrics: current status and materials properties considerations;Wilk;J. Appl. Phys.,2001
4. Future of nano CMOS technology;Iwai;Solid State Electron.,2015
5. Band offsets of wide-band-gap oxides and implications for future electronic devices;Robertson;J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas Phenom.,2000
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