State of Stress in the Near-Contact Region of a Semiconductor during Metallization Track Electrodegradation-Reference-Cited by-同舟云学术

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State of Stress in the Near-Contact Region of a Semiconductor during Metallization Track Electrodegradation

Published:2020-12 Issue:13 Volume:2020 Page:1658-1662
ISSN:0036-0295
Container-title:Russian Metallurgy (Metally)
language:en
Short-container-title:Russ. Metall.

Author:

Skvortsov A. A.,Zuev S. M.,Koryachko M. V.,Voloshinov E. B.

Publisher

Pleiades Publishing Ltd

Subject

Metals and Alloys

Link

http://link.springer.com/content/pdf/10.1134/S0036029520130364.pdf

Reference11 articles.

1. L. Y. Lim and S. A. Meguid, “Temperature dependent dynamic growth of thermally grownoxide in thermal barrier coatings,” Mater. Des., No. 164, 107543 (2019). https://doi.org/10.1016/j.matdes.2018.107543

2. U. Kashniyal and K. P. Pandey, “Stress induced degradation and reliability of Al2O3 thin film on silicon,” Vacuum, No. 152, 109–113 (2018). https://doi.org/10.1016/j.vacuum.2018.03.009

3. Y.-L. Chen, J. Wu, and C. C. Lee, “Solid-state bonding of silicon chips to copper substrates with graded circular micro-trenches,” Mater. Sci.: Mater. Electron., No. 29 (12), 10037–10043 (2018). https://doi.org/10.1007/s10854-018-9047-7

4. Y. Li, H.-T. Lee, and M. Saka, “Influence of local thermal dissipation on electromigration in an Al thin-film line,” Microelectron. Reliab., No. 65, 178–183 (2016). https://doi.org/10.1016/j.microrel.2016.08.002

5. A. A. Skvortsov, S. M. Zuev, M. V. Koryachko, and V. V. Glinskiy, “Thermal shock and degradation of metallization systems on silicon,” Microelectron. Int., No. 33 (2), 102–106 (2016). https://doi.org/10.1108/MI-05-2015-0049

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1. Dynamics of thermal destruction of Al-(Ti,SiO2)-Si structures under pulsed action;Third International Conference on Optics, Computer Applications, and Materials Science (CMSD-III 2023);2024-02-20

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