A model of conduction in inhomogeneous degenerate semiconductors: Application to silicon‐on‐sapphire films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332244
Reference6 articles.
1. New model of conduction mechanism in semi‐insulating GaAs
2. Conduction mechanisms in amorphous and disordered semiconductors explained by a model of medium-range disorder of composition
3. Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
4. High-field electron transport in silicon-on-sapphire layers
5. Effets galvanomagnétiques dans les semiconducteurs anisotropes inhomogènes Application à la caractérisation des films de silicium sur saphir
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1. Analysis of transport properties of β-SiC films: determination of donor density and compensation ratio;Diamond and Related Materials;1997-08
2. Structural, optical and electrical properties of state of the art cubic SiC films;Materials Science and Engineering: B;1995-01
3. Transport Measurements;Electrical Characterization of Silicon-on-Insulator Materials and Devices;1995
4. Hall effect in gratinglike potential modulated inversion layers;Journal of Applied Physics;1989-12
5. Electronic transport in gratinglike potential modulated inversion layers;Journal of Applied Physics;1989-12
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