Effets galvanomagnétiques dans les semiconducteurs anisotropes inhomogènes Application à la caractérisation des films de silicium sur saphir-Reference-Cited by-同舟云学术

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Effets galvanomagnétiques dans les semiconducteurs anisotropes inhomogènes Application à la caractérisation des films de silicium sur saphir

Published:1980 Issue:3 Volume:15 Page:725-732
ISSN:0035-1687
Container-title:Revue de Physique Appliquée
language:
Short-container-title:Rev. Phys. Appl. (Paris)

Author:

Cristoloveanu S.,Lee J.H.,Chovet A.

Publisher

EDP Sciences

Link

http://rphysap.journaldephysique.org/10.1051/rphysap:01980001503072500/pdf

Reference13 articles.

1. Non uniform recombination in thin silicon-on-sapphire films

2. Electrical Properties of Silicon Films on Sapphire Using the MOS Hall Technique

3. Electron mobility in SOS films

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of Trap States at Silicon-On-Insulator (SOI)/Buried Oxide (BOX) Interface by Back Gate Transconductance Characteristics in SOI MOSFETs;Japanese Journal of Applied Physics;2003-04-30

2. Transistor-Based Characterization Techniques;Electrical Characterization of Silicon-on-Insulator Materials and Devices;1995

3. Characterization of SOI MOSFETs;The Kluwer International Series in Engineering and Computer Science;1995

4. Determination of the mobility profile in silicon-on-sapphire material using the “fat” FET principle;Solid-State Electronics;1988-11

5. Silicon films on sapphire;Reports on Progress in Physics;1987-03-01

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