Structural, optical and electrical properties of state of the art cubic SiC films-Reference-Cited by-同舟云学术

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Structural, optical and electrical properties of state of the art cubic SiC films

Published:1995-01 Issue:1-3 Volume:29 Page:160-164
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Stoemenos J.,Dezauzier C.,Arnaud G.,Contreras S.,Camassel J.,Pascual J.,Robert J.L.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

2. CREE Research Inc., 2810 Meridian Parkway, Durham, NC 27713.

3. GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy

4. Simulations and experiments of SiC heteroepitaxial growth on Si(001) surface

5. Orientational ordering and domain-wall formation in Sb overlayers on GaAs(110)

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1. Optical spectroscopy study of damage in ion-irradiated 3C-SiC epilayers on a silicon substrate;Journal of Applied Physics;2023-05-19

2. Optical conductivity of semiconductor crystals with a screw dislocation;Solid State Communications;2014-01

3. Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates;Materials Science Forum;2010-04

4. Structural Properties of 3C-SiC Grown by Sublimation Epitaxy;Materials Science Forum;2009-03

5. A Vapor–Liquid–Solid Mechanism for Growing 3C-SiC Single-Domain Layers on 6H-SiC(0001);Advanced Functional Materials;2006-05-02

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