High-field electron transport in silicon-on-sapphire layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference8 articles.
1. Electron mobility in SOS films
2. Variations in Electrical Properties of Silicon Films on Sapphire Using the MOS Hall Technique
3. Physical basis of short-channel MESFET operation
4. Series resistance effects in semiconductor CV profiling
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Silicon films on sapphire;Reports on Progress in Physics;1987-03-01
2. Interpretation of thermoelectric power in silicon‐on‐sapphire films by means of a long‐range potential‐fluctuation model;Journal of Applied Physics;1985-01-15
3. Carrier Transport at the Si–SiO2 Interface;VLSI Electronics Microstructure Science;1985
4. Semi-empirical equations for electron velocity in silicon: Part I—Bulk;IEEE Transactions on Electron Devices;1983-12
5. Fabrication and analysis of 1/2µm Silicon logic MESFET's;IEEE Transactions on Electron Devices;1983-10
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