Electronic transport in gratinglike potential modulated inversion layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343696
Reference18 articles.
1. Conduction mechanisms in amorphous and disordered semiconductors explained by a model of medium-range disorder of composition
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3. A model of conduction in inhomogeneous degenerate semiconductors: Application to silicon‐on‐sapphire films
4. Interpretation of thermoelectric power in silicon‐on‐sapphire films by means of a long‐range potential‐fluctuation model
5. A model of conduction in polycrystalline silicon films
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Novel method for producing nanostructures in silicon inversion layers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-05
2. Electrical conduction in inversion layers modulated by a long-range potential;Physical Review B;1992-12-15
3. Conduction and scattering mechanisms in potential modulated inversion layers;Journal of Applied Physics;1991-02
4. Hall effect in gratinglike potential modulated inversion layers;Journal of Applied Physics;1989-12
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