Structure and stoichiometry of (0001) 4H–SiC/oxide interface-Reference-Cited by-同舟云学术

Structure and stoichiometry of (0001) 4H–SiC/oxide interface

Published:2010-08-16 Issue:7 Volume:97 Page:071908
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhu Xingguang,Lee Hang Dong,Feng Tian,Ahyi Ayayi C.,Mastrogiovanni Daniel,Wan Alan,Garfunkel Eric,Williams John R.,Gustafsson Torgny,Feldman Leonard C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3481672

Reference24 articles.

1. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

2. Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation

3. Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC

4. Presence and Resistance to Wet Etching of Silicon Oxycarbides at the SiO[sub 2]/SiC Interface

5. Bonding at theSiC−SiO2Interface and the Effects of Nitrogen and Hydrogen

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